DMS based quantum wells with magnetically tuned heavy hole confinement

A. Petrou; Wu-Ching Chou; X. C. Liu; J. Warnock; B. T. Jonker

doi:10.1016/0022-2313(92)90242-2

DMS based quantum wells with magnetically tuned heavy hole confinement

A. Petrou^*, Wu-Ching Chou, X. C. Liu, J. Warnock, B. T. Jonker

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We discuss the results of a magneto-optical study of ZnFeSe/ZnSe/ZnFeSe and ZnMnSe/ZnSe/ZnMnSe quantum well structures grown by molecular beam epitaxy on GaAs. In both systems the zero field heavy hole offset is near zero and the heavy hole confinement is controlled by an externally applied magnetic field which produces large spin splittings in the diluted magnetic semiconductor (DMS) layers. The changes in the band structure induced by the magnetic field result in a pronounced asymmetry of the heavy hole exciton spin components as the barrier and well hole populations become spin-polarized. Both the iron-and the mangenese-based structures show similar behavior even though ZnFeSe is a Van Vleck paramagnet while ZnMnSe is a Brillouin paramagnet.

Original language	English
Pages (from-to)	175-181
Number of pages	7
Journal	Journal of Luminescence
Volume	52
Issue number	1-4
DOIs	https://doi.org/10.1016/0022-2313(92)90242-2
State	Published - 1 Jan 1992

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title = "DMS based quantum wells with magnetically tuned heavy hole confinement",

abstract = "We discuss the results of a magneto-optical study of ZnFeSe/ZnSe/ZnFeSe and ZnMnSe/ZnSe/ZnMnSe quantum well structures grown by molecular beam epitaxy on GaAs. In both systems the zero field heavy hole offset is near zero and the heavy hole confinement is controlled by an externally applied magnetic field which produces large spin splittings in the diluted magnetic semiconductor (DMS) layers. The changes in the band structure induced by the magnetic field result in a pronounced asymmetry of the heavy hole exciton spin components as the barrier and well hole populations become spin-polarized. Both the iron-and the mangenese-based structures show similar behavior even though ZnFeSe is a Van Vleck paramagnet while ZnMnSe is a Brillouin paramagnet.",

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AU - Petrou, A.

AU - Chou, Wu-Ching

AU - Liu, X. C.

AU - Warnock, J.

AU - Jonker, B. T.

PY - 1992/1/1

Y1 - 1992/1/1

N2 - We discuss the results of a magneto-optical study of ZnFeSe/ZnSe/ZnFeSe and ZnMnSe/ZnSe/ZnMnSe quantum well structures grown by molecular beam epitaxy on GaAs. In both systems the zero field heavy hole offset is near zero and the heavy hole confinement is controlled by an externally applied magnetic field which produces large spin splittings in the diluted magnetic semiconductor (DMS) layers. The changes in the band structure induced by the magnetic field result in a pronounced asymmetry of the heavy hole exciton spin components as the barrier and well hole populations become spin-polarized. Both the iron-and the mangenese-based structures show similar behavior even though ZnFeSe is a Van Vleck paramagnet while ZnMnSe is a Brillouin paramagnet.

AB - We discuss the results of a magneto-optical study of ZnFeSe/ZnSe/ZnFeSe and ZnMnSe/ZnSe/ZnMnSe quantum well structures grown by molecular beam epitaxy on GaAs. In both systems the zero field heavy hole offset is near zero and the heavy hole confinement is controlled by an externally applied magnetic field which produces large spin splittings in the diluted magnetic semiconductor (DMS) layers. The changes in the band structure induced by the magnetic field result in a pronounced asymmetry of the heavy hole exciton spin components as the barrier and well hole populations become spin-polarized. Both the iron-and the mangenese-based structures show similar behavior even though ZnFeSe is a Van Vleck paramagnet while ZnMnSe is a Brillouin paramagnet.

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