DMS based quantum wells with magnetically tuned heavy hole confinement

A. Petrou*, Wu-Ching Chou, X. C. Liu, J. Warnock, B. T. Jonker

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

We discuss the results of a magneto-optical study of ZnFeSe/ZnSe/ZnFeSe and ZnMnSe/ZnSe/ZnMnSe quantum well structures grown by molecular beam epitaxy on GaAs. In both systems the zero field heavy hole offset is near zero and the heavy hole confinement is controlled by an externally applied magnetic field which produces large spin splittings in the diluted magnetic semiconductor (DMS) layers. The changes in the band structure induced by the magnetic field result in a pronounced asymmetry of the heavy hole exciton spin components as the barrier and well hole populations become spin-polarized. Both the iron-and the mangenese-based structures show similar behavior even though ZnFeSe is a Van Vleck paramagnet while ZnMnSe is a Brillouin paramagnet.

Original languageEnglish
Pages (from-to)175-181
Number of pages7
JournalJournal of Luminescence
Volume52
Issue number1-4
DOIs
StatePublished - 1 Jan 1992

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