Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell

Yin Nien Chen; Chien Yu Hsieh; Ming Long Fan; Vita Pi Ho Hu; Pin Su; Ching Te Chuang

doi:10.1109/VTSA.2011.5872221

Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell

Yin Nien Chen^*, Chien Yu Hsieh, Ming Long Fan, Vita Pi Ho Hu, Pin Su, Ching Te Chuang

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We propose a novel Independently-controlled-Gate (IG) 7T FinFET SRAM cell. The cell utilizes the stacking-like property of split-gate super-high-V _T FinFET devices to eliminate Read disturb and Half-Select disturb, and keeper and VSS-control to mitigate Read bit-line leakage. The stability and performance of the proposed cell are compared with the conventional 6T tied-gate cell and recently reported 6T-Column-Decoupled cell using TCAD mixed-mode simulations. 3D atomistic mixed-mode Monte-Carlo simulations are performed to investigate the impact of local random variations due to Fin LER. The results indicate that the proposed cell shows better cell stability and provides sufficient margins even considering intrinsic device variations.

Original language	English
Title of host publication	Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Pages	34-37
Number of pages	4
DOIs	https://doi.org/10.1109/VTSA.2011.5872221
State	Published - 11 Jul 2011
Event	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 - Hsinchu, Taiwan Duration: 25 Apr 2011 → 27 Apr 2011

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011
Country	Taiwan
City	Hsinchu
Period	25/04/11 → 27/04/11

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10.1109/VTSA.2011.5872221

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Chen, Y. N., Hsieh, C. Y., Fan, M. L., Hu, V. P. H., Su, P., & Chuang, C. T. (2011). Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011 (pp. 34-37). [5872221] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872221

Chen, Yin Nien ; Hsieh, Chien Yu ; Fan, Ming Long ; Hu, Vita Pi Ho ; Su, Pin ; Chuang, Ching Te. / Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell. Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. pp. 34-37 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{76bef5c82deb4fe0b938440ce9fe3228,

title = "Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell",

abstract = "We propose a novel Independently-controlled-Gate (IG) 7T FinFET SRAM cell. The cell utilizes the stacking-like property of split-gate super-high-V T FinFET devices to eliminate Read disturb and Half-Select disturb, and keeper and VSS-control to mitigate Read bit-line leakage. The stability and performance of the proposed cell are compared with the conventional 6T tied-gate cell and recently reported 6T-Column-Decoupled cell using TCAD mixed-mode simulations. 3D atomistic mixed-mode Monte-Carlo simulations are performed to investigate the impact of local random variations due to Fin LER. The results indicate that the proposed cell shows better cell stability and provides sufficient margins even considering intrinsic device variations.",

author = "Chen, {Yin Nien} and Hsieh, {Chien Yu} and Fan, {Ming Long} and Hu, {Vita Pi Ho} and Pin Su and Chuang, {Ching Te}",

year = "2011",

month = jul,

day = "11",

doi = "10.1109/VTSA.2011.5872221",

language = "English",

isbn = "9781424484928",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "34--37",

booktitle = "Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011",

note = "null ; Conference date: 25-04-2011 Through 27-04-2011",

}

Chen, YN, Hsieh, CY, Fan, ML, Hu, VPH, Su, P & Chuang, CT 2011, Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell. in Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011., 5872221, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 34-37, 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011, Hsinchu, Taiwan, 25/04/11. https://doi.org/10.1109/VTSA.2011.5872221

Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell. / Chen, Yin Nien; Hsieh, Chien Yu; Fan, Ming Long; Hu, Vita Pi Ho; Su, Pin; Chuang, Ching Te.

Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 34-37 5872221 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell

AU - Chen, Yin Nien

AU - Hsieh, Chien Yu

AU - Fan, Ming Long

AU - Hu, Vita Pi Ho

AU - Su, Pin

AU - Chuang, Ching Te

PY - 2011/7/11

Y1 - 2011/7/11

N2 - We propose a novel Independently-controlled-Gate (IG) 7T FinFET SRAM cell. The cell utilizes the stacking-like property of split-gate super-high-V T FinFET devices to eliminate Read disturb and Half-Select disturb, and keeper and VSS-control to mitigate Read bit-line leakage. The stability and performance of the proposed cell are compared with the conventional 6T tied-gate cell and recently reported 6T-Column-Decoupled cell using TCAD mixed-mode simulations. 3D atomistic mixed-mode Monte-Carlo simulations are performed to investigate the impact of local random variations due to Fin LER. The results indicate that the proposed cell shows better cell stability and provides sufficient margins even considering intrinsic device variations.

AB - We propose a novel Independently-controlled-Gate (IG) 7T FinFET SRAM cell. The cell utilizes the stacking-like property of split-gate super-high-V T FinFET devices to eliminate Read disturb and Half-Select disturb, and keeper and VSS-control to mitigate Read bit-line leakage. The stability and performance of the proposed cell are compared with the conventional 6T tied-gate cell and recently reported 6T-Column-Decoupled cell using TCAD mixed-mode simulations. 3D atomistic mixed-mode Monte-Carlo simulations are performed to investigate the impact of local random variations due to Fin LER. The results indicate that the proposed cell shows better cell stability and provides sufficient margins even considering intrinsic device variations.

UR - http://www.scopus.com/inward/record.url?scp=79960024185&partnerID=8YFLogxK

U2 - 10.1109/VTSA.2011.5872221

DO - 10.1109/VTSA.2011.5872221

M3 - Conference contribution

AN - SCOPUS:79960024185

SN - 9781424484928

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 34

EP - 37

BT - Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011

Y2 - 25 April 2011 through 27 April 2011

ER -

Chen YN, Hsieh CY, Fan ML, Hu VPH, Su P, Chuang CT. Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell. In Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2011. 2011. p. 34-37. 5872221. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2011.5872221

Disturb-free Independently-controlled-Gate 7T FinFET SRAM cell

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