Distribution of electronic reconstruction at the n-type LaAlO 3/SrTiO 3 interface revealed by hard x-ray photoemission spectroscopy

Y. Y. Chu*, Y. F. Liao, V. T. Tra, J. C. Yang, W. Z. Liu, Ying-hao Chu, Jiunn-Yuan Lin, J. H. Huang, J. Weinen, S. Agrestini, K. D. Tsuei, D. J. Huang

*Corresponding author for this work

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Abstract

We investigated the electronic reconstruction at the n-type LaAlO 3/SrTiO 3 interface with hard x-ray photoelectron spectroscopy (HAXPES) under grazing incidence. By exploiting the collapse of evanescent x-ray waves and the abrupt increase of x-ray absorption at the critical incidence angle, our HAXPES study reveals a 2% electronic reconstruction from Ti 4+ to Ti 3+ occurring near the interface. Such an electronic reconstruction also extends from the interface into SrTiO 3 with a depth of about 48Å (∼12 unit cells) and an estimated total charge transfer of ∼0.24 electrons per two-dimensional unit cell.

Original languageEnglish
Article number262101
JournalApplied Physics Letters
Volume99
Issue number26
DOIs
StatePublished - 26 Dec 2011

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    Chu, Y. Y., Liao, Y. F., Tra, V. T., Yang, J. C., Liu, W. Z., Chu, Y., Lin, J-Y., Huang, J. H., Weinen, J., Agrestini, S., Tsuei, K. D., & Huang, D. J. (2011). Distribution of electronic reconstruction at the n-type LaAlO 3/SrTiO 3 interface revealed by hard x-ray photoemission spectroscopy. Applied Physics Letters, 99(26), [262101]. https://doi.org/10.1063/1.3672099