Distortion simulation of 90 nm nMOSFET for RF applications

Xuemei Xi, Kanyu Cao, Xiaodong Jin, Hui Wan, Mansun Chan, Chen-Ming Hu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

This paper studies the impact of device structure and process parameters variation on the third order harmonic distortion of 90 nm nMOSFETs, the next generation CMOS technology node. Simulation results show that polysilicon doping and S/D resistances are playing an important role in device distortion characteristics. Both S/D extension and halo doping concentration can be optimized to achieve desirable I-V characteristics as well as reduced distortion.

Original languageEnglish
Title of host publication2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
EditorsHiroshi Iwai, Paul Yu, Bing-Zong Li, Guo-Ping Ru, Xin-Ping Qu
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages247-250
Number of pages4
ISBN (Electronic)0780365208, 9780780365209
DOIs
StatePublished - 1 Jan 2001
Event6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Shanghai, China
Duration: 22 Oct 200125 Oct 2001

Publication series

Name2001 6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001 - Proceedings
Volume1

Conference

Conference6th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2001
CountryChina
CityShanghai
Period22/10/0125/10/01

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