Distance dependence of energy transfer from InGaN quantum wells to graphene oxide

T. N. Lin, L. T. Huang, G. W. Shu, C. T. Yuan, J. L. Shen*, C. A.J. Lin, W. H. Chang, C. H. Chiu, D. W. Lin, Chien-Chung Lin, Hao-Chung Kuo

*Corresponding author for this work

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Abstract

We report the distance-dependent energy transfer from an InGaN quantum well to graphene oxide (GO) by timeresolved photoluminescence (PL). A pronounced shortening of the PL decay time in the InGaN quantum well was observed when interacting with GO. The nature of the energy-transfer process has been analyzed, and we find the energy-transfer efficiency depends on the 1/d2 separation distance, which is dominated by the layer-to-layer dipole coupling.

Original languageEnglish
Pages (from-to)2897-2899
Number of pages3
JournalOptics Letters
Volume38
Issue number15
DOIs
StatePublished - 1 Aug 2013

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    Lin, T. N., Huang, L. T., Shu, G. W., Yuan, C. T., Shen, J. L., Lin, C. A. J., Chang, W. H., Chiu, C. H., Lin, D. W., Lin, C-C., & Kuo, H-C. (2013). Distance dependence of energy transfer from InGaN quantum wells to graphene oxide. Optics Letters, 38(15), 2897-2899. https://doi.org/10.1364/OL.38.002897