Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers

K. H. Lee, P. C. Chang*, S. J. Chang, Y. K. Su, Y. C. Wang, C. L. Yu, Cheng-Huang Kuo

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review


We present the characteristics of nitride-based Schottky diodes with a single low-temperature (LT) GaN nucleation layer and multiple MgxNy/GaN nucleation layers. With multiple MgxNy/GaN nucleation layers, it was found that reverse leakage current became smaller by six orders of magnitude than that with a conventional LT GaN nucleation layer. This result might be attributed to the significant reduction of threading dislocations (TDs) and TD-related surface states. From the double crystal X-ray diffraction and photoluminescence analyses, it was found that the introduction of multiple MgxNy/GaN nucleation layers could be able to effectively reduce the edge-type TDs. Furthermore, it was also found that effective Schottky barrier height (ΦB) increased from 1.07 to 1.15 eV with the insertion of the multiple MgxNy/GaN nucleation layers.

Original languageEnglish
Pages (from-to)2839-2842
Number of pages4
JournalThin Solid Films
Issue number10
StatePublished - 1 Mar 2010


  • Atomic Force Microscopy
  • Electrical properties and measurements
  • MgN/GaN
  • Nitrides
  • Nucleation layers
  • Schottky diodes
  • Secondary-Ion Mass Spectroscopy
  • X-ray diffraction

Fingerprint Dive into the research topics of 'Dislocation reduction in nitride-based Schottky diodes by using multiple Mg<sub>x</sub>N<sub>y</sub>/GaN nucleation layers'. Together they form a unique fingerprint.

Cite this