Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers

K. H. Lee, P. C. Chang*, S. J. Chang, Y. K. Su, Y. C. Wang, C. L. Yu, Cheng-Huang Kuo

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

We present the characteristics of nitride-based Schottky diodes with a single low-temperature (LT) GaN nucleation layer and multiple MgxNy/GaN nucleation layers. With multiple MgxNy/GaN nucleation layers, it was found that reverse leakage current became smaller by six orders of magnitude than that with a conventional LT GaN nucleation layer. This result might be attributed to the significant reduction of threading dislocations (TDs) and TD-related surface states. From the double crystal X-ray diffraction and photoluminescence analyses, it was found that the introduction of multiple MgxNy/GaN nucleation layers could be able to effectively reduce the edge-type TDs. Furthermore, it was also found that effective Schottky barrier height (ΦB) increased from 1.07 to 1.15 eV with the insertion of the multiple MgxNy/GaN nucleation layers.

Original languageEnglish
Pages (from-to)2839-2842
Number of pages4
JournalThin Solid Films
Volume518
Issue number10
DOIs
StatePublished - 1 Mar 2010

Keywords

  • Atomic Force Microscopy
  • Electrical properties and measurements
  • MgN/GaN
  • Nitrides
  • Nucleation layers
  • Schottky diodes
  • Secondary-Ion Mass Spectroscopy
  • X-ray diffraction

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    Lee, K. H., Chang, P. C., Chang, S. J., Su, Y. K., Wang, Y. C., Yu, C. L., & Kuo, C-H. (2010). Dislocation reduction in nitride-based Schottky diodes by using multiple MgxNy/GaN nucleation layers. Thin Solid Films, 518(10), 2839-2842. https://doi.org/10.1016/j.tsf.2009.08.051