Abstract
Unintentionally doped GaN epitaxial layers with a conventional single low temperature (LT) GaN buffer layer and with multiple Mgx Ny GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition. The multiple Mgx Ny GaN buffer layers exhibit a low nuclei density, increasing the volume of defect-free regions and reducing the dislocations associated with the grain boundaries. Therefore, the GaN with multiple Mgx Ny GaN buffer layers reveals an asymmetrical reflection (102) with a small full width at half maximum, and a higher mobility, lower background concentration, and lower etching pit density than the GaN with the LT GaN buffer layer.
Original language | English |
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Article number | 212109 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 21 |
DOIs | |
State | Published - 1 Jun 2007 |