Dislocation reduction in GaN with multiple Mgx Ny GaN buffer layers by metal organic chemical vapor deposition

C. J. Tun; Cheng-Huang Kuo; Y. K. Fu; C. W. Kuo; C. J. Pan; G. C. Chi

doi:10.1063/1.2742590

Dislocation reduction in GaN with multiple Mgx Ny GaN buffer layers by metal organic chemical vapor deposition

C. J. Tun^*, Cheng-Huang Kuo, Y. K. Fu, C. W. Kuo, C. J. Pan, G. C. Chi

^*Corresponding author for this work

Institute of Lighting and Energy Photonics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Unintentionally doped GaN epitaxial layers with a conventional single low temperature (LT) GaN buffer layer and with multiple Mgx Ny GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition. The multiple Mgx Ny GaN buffer layers exhibit a low nuclei density, increasing the volume of defect-free regions and reducing the dislocations associated with the grain boundaries. Therefore, the GaN with multiple Mgx Ny GaN buffer layers reveals an asymmetrical reflection (102) with a small full width at half maximum, and a higher mobility, lower background concentration, and lower etching pit density than the GaN with the LT GaN buffer layer.

Original language	English
Article number	212109
Journal	Applied Physics Letters
Volume	90
Issue number	21
DOIs	https://doi.org/10.1063/1.2742590
State	Published - 1 Jun 2007

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title = "Dislocation reduction in GaN with multiple Mgx Ny GaN buffer layers by metal organic chemical vapor deposition",

abstract = "Unintentionally doped GaN epitaxial layers with a conventional single low temperature (LT) GaN buffer layer and with multiple Mgx Ny GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition. The multiple Mgx Ny GaN buffer layers exhibit a low nuclei density, increasing the volume of defect-free regions and reducing the dislocations associated with the grain boundaries. Therefore, the GaN with multiple Mgx Ny GaN buffer layers reveals an asymmetrical reflection (102) with a small full width at half maximum, and a higher mobility, lower background concentration, and lower etching pit density than the GaN with the LT GaN buffer layer.",

author = "Tun, {C. J.} and Cheng-Huang Kuo and Fu, {Y. K.} and Kuo, {C. W.} and Pan, {C. J.} and Chi, {G. C.}",

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AU - Tun, C. J.

AU - Kuo, Cheng-Huang

AU - Fu, Y. K.

AU - Kuo, C. W.

AU - Pan, C. J.

AU - Chi, G. C.

PY - 2007/6/1

Y1 - 2007/6/1

N2 - Unintentionally doped GaN epitaxial layers with a conventional single low temperature (LT) GaN buffer layer and with multiple Mgx Ny GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition. The multiple Mgx Ny GaN buffer layers exhibit a low nuclei density, increasing the volume of defect-free regions and reducing the dislocations associated with the grain boundaries. Therefore, the GaN with multiple Mgx Ny GaN buffer layers reveals an asymmetrical reflection (102) with a small full width at half maximum, and a higher mobility, lower background concentration, and lower etching pit density than the GaN with the LT GaN buffer layer.

AB - Unintentionally doped GaN epitaxial layers with a conventional single low temperature (LT) GaN buffer layer and with multiple Mgx Ny GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition. The multiple Mgx Ny GaN buffer layers exhibit a low nuclei density, increasing the volume of defect-free regions and reducing the dislocations associated with the grain boundaries. Therefore, the GaN with multiple Mgx Ny GaN buffer layers reveals an asymmetrical reflection (102) with a small full width at half maximum, and a higher mobility, lower background concentration, and lower etching pit density than the GaN with the LT GaN buffer layer.

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