Dislocation reduction in GaN with double MgxNy/AlN buffer layer by metal organic chemical vapor deposition

C. W. Kuo, Y. K. Fu, Cheng-Huang Kuo*, L. C. Chang, C. J. Tun, C. J. Pan, G. C. Chi

*Corresponding author for this work

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Unintentionally doped GaN with conventional single low-temperature (LT) AlN buffer layer and with double MgxNy/AlN buffer layers both were prepared. It was found that we could reduce defect density and thus improve crystal quality of the GaN by using double MgxNy/AlN buffer layers. GaN with double MgxNy/AlN buffer layers reveals an asymmetrical reflection (1 0 2) and (0 0 2) with a smaller full-width at half-maximum (FWHM), and a higher mobility, lower background concentration and lower etching pit density (EPD) than the GaN with the LT-AlN buffer layer.

Original languageEnglish
Pages (from-to)249-253
Number of pages5
JournalJournal of Crystal Growth
Volume311
Issue number2
DOIs
StatePublished - 1 Jan 2009

Keywords

  • A1. Dislocation
  • A1. Double MgN/AlN buffer layer
  • A1. Mobility
  • B1. GaN

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