Dislocation reduction in GaN grown on stripe patterned r-plane sapphire substrates

Hou Guang Chen*, Tsung Shine Ko, Shih Chun Ling, Tien-chang Lu, Hao-Chung Kuo, Shing Chung Wang, Yue Han Wu, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Scopus citations


Extended defect reduction in GaN can be achieved via direct growth on stripe patterned (1 1- 02) r -plane sapphire substrates by metal organic chemical vapor deposition. The striped mesa is along [11 2- 0] with two etched sides in {0001} and {1 1- 01} faces. GaN grown on both etched facets in epitaxy exhibit different crystallographic relationships with sapphire substrate which are (1 1- 02)sapphire ∥ (11 2- 0)GaN and [11 2- 0]sapphire ∥ [1- 100]GaN, and (0001)sapphire ∥ (0001)GaN and [11 2- 0]sapphire ∥ [1- 100]GaN, respectively. The dislocation densities can be significantly reduced through epitaxial growth on the inclined lateral faces of mesas. Dislocation density in the order of ∼ 107 cm-2 can be achieved in the tilted GaN.

Original languageEnglish
Article number021914
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - 9 Jul 2007

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