Dislocation annihilation in GaN with multiple MgxN y/GaN buffer layers by metal organic chemical vapor deposition

Y. K. Fu, C. J. Tun, Cheng-Huang Kuo

Research output: Contribution to journalConference article

Abstract

Unintentionally doped GaN epitaxial layers with a conventional single low-temperature (LT) GaN buffer layer and with multiple MgxN y/GaN buffer layers were grown on sapphire substrates by metal organic chemical vapor deposition (MOCVD). X-ray Photoelectron Spectroscopy (XPS) result reveals Mg 2p core-level spectra from the 12 pairs of Mg xNy/GaN buffer layers. The multiple MgxN y/GaN buffer layers exhibit a low nuclei density, increasing the volume of defect-free regions and reducing the dislocations associated with the grain boundaries. Therefore, the GaN with multiple MgxNy/GaN buffer layers reveals an asymmetrical reflection (102) with a small full-width at half-maximum (FWHM), and a higher mobility, lower background concentration and lower etching pit density (EPD) than the GaN with the LT GaN buffer layer.

Original languageEnglish
Pages (from-to)1499-1501
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number6
DOIs
StatePublished - 1 Dec 2008
Event7th International Conference of Nitride Semiconductors, ICNS-7 - Las Vegas, NV, United States
Duration: 16 Sep 200721 Sep 2007

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