Discrete monolayer light emission from GaSb wetting layer in GaAs

Ming Cheng Lo*, Shyh Jer Huang, Chien Ping Lee, Sheng-Di Lin, Shun-Tung Yen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Distinct light emission peaks from monolayers of GaSb quantum wells in GaAs were observed. Discrete atomic layers of GaSb for the wetting layer prior to quantum dot formation give rise to transition peaks corresponding to quantum wells with 1, 2, and 3 ML. From the transition energies the authors were able to deduce the band offset parameter between GaSb and GaAs. By fitting the experimental data with the theoretical calculated result using an 8×8 kp Burt's Hamiltonian along with the Bir-Picus deformation potentials, the strain-free (fully strained) valence band discontinuity for this type-II heterojunction was determined to be 0.45 eV (0.66 eV).

Original languageEnglish
Article number243102
JournalApplied Physics Letters
Volume90
Issue number24
DOIs
StatePublished - 22 Jun 2007

Fingerprint Dive into the research topics of 'Discrete monolayer light emission from GaSb wetting layer in GaAs'. Together they form a unique fingerprint.

Cite this