Discrete dopant induced electrical and thermal fluctuation in nanoscale SOI FinFET

Yiming Li*, Chih Hong Hwang, Shao Ming Yu, Hsuan Ming Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The International Roadmap for Semiconductors has forecasted a transition from conventional bulk device to silicon-on-insulator (SOI) one, and then to multiple-gate SOI for high-performance devices. Impact of the discrete-dopant number and discrete-dopant position on device characteristics is crucial for nanoscale semiconductor devices. In this paper, the discrete dopant induced electrical and thermal fluctuation of 16nm SOI FinFETs is for the First time explored. A three-dimensional "atomistic" device simulation with quantum hydrodynamic equation is proposed and performed for electrical and thermal characteristics of the discrete dopant fluctuated SOI FinFETs. Discrete dopants are statistically positioned in the 3D channel region to study associated carrier transportation characteristics, concurrently capturing "dopant concentration variation" and "dopant position fluctuation". Effect of the discrete-dopant-number- and discrete-dopant-position-induced fluctuations on device characteristic including variations of the lattice and electron temperatures are advanced. The large-scale computational statistics study provides us an insight into the fluctuation of electrical and thermal characteristics and mechanism of immunity against fluctuation in SOI FinFETs.

Original languageEnglish
Title of host publication2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages1166-1169
Number of pages4
DOIs
StatePublished - 2007
Event2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
Duration: 2 Aug 20075 Aug 2007

Publication series

Name2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Conference

Conference2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
CountryChina
CityHong Kong
Period2/08/075/08/07

Keywords

  • 3D "atomistic" technique
  • Discrete dopant
  • FinFET
  • Fluctuation
  • Large-scale modeling and simulation. Statistical simulation
  • Nanoscale transistor

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