Discrete-dopant-fluctuated transient behavior and variability suppression in 16-nm-gate complementary metal-oxide-semiconductor field-effect transistors

Yiming Li*, Chih Hong Hwang, Hui Wen Cheng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Variability in the characteristics of nanoscale complementary metal-oxide-semiconductor (CMOS) field-effect transistors is a major challenge to scaling and integration. However, little attention has been focused on the existence of transient behavior fluctuations of devices owing to random dopant placement. In this study, we explore the discrete-dopant-induced transient behavior fluctuations of 16-nmgate CMOS circuits through a three-dimensional large-scale statistically sound ''atomistic'' device-circuit-coupled simulation approach, concurrently capturing ''dopant concentration variation'' and ''dopant position fluctuation''. For a 16-nm-gate CMOS inverter, a 3.5% variation of the rise time, a 2.4% variation of the fall time, an 18.3% variation of the high-to-low delay time, and a 13.2% variation of the lowto-high delay time are estimated and discussed. Fluctuation suppression techniques proposed from the device and the circuit viewpoints are implemented to examine the associated intrinsic fluctuations.

Original languageEnglish
Article number04C051
JournalJapanese journal of applied physics
Volume48
Issue number4 PART 2
DOIs
StatePublished - Apr 2009

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