Direct-tunneling gate leakage current in double-gate and ultrathin body MOSFETs

Leland Chang*, Kevin J. Yang, Yee Chia Yeo, Igor Polishchuk, Tsu Jae King, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

The impact of energy quantization on gate tunneling current is studied for double-gate and ultrathin body MOSFETs. Reduced vertical electric field and quantum confinement in the channel of these thin-body devices causes a decrease in gate leakage by as much as an order of magnitude. The effects of body thickness scaling and channel crystallographic orientation are studied. The impact of threshold voltage control solutions, including doped channel and asymmetric double-gate structures is also investigated. Future gate dielectric thickness scaling and the use of high-κ gate dielectrics are discussed.

Original languageEnglish
Pages (from-to)2288-2294
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume49
Issue number12
DOIs
StatePublished - 1 Dec 2002

Keywords

  • Direct tunneling
  • Double-gate MOSFET
  • Energy quantization
  • Gate leakage current
  • High-κ dielectrics
  • Threshold voltage control
  • Ultrathin body MOSFET
  • Wavefunction penetration

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