Direct probing of density of states of reduced graphene oxides in a wide voltage range by tunneling junction

Sheng Tsung Wang*, Yen Fu Lin, Ya Chi Li, Pei Ching Yeh, Shiow Jing Tang, Rosenstein Baruch, Tai Hsin Hsu, Xufeng Zhou, Zhaoping Liu, Minn Tsong Lin, Wen-Bin Jian

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Reduced graphene oxide (rGO) sheets are synthesized and tunneling junction devices are fabricated with an aluminum oxide layer inserted in between electrodes and rGO sheets. Differential conductances, revealing density of states (DOS), of rGO sheets are measured in a wide voltage range. A difference in DOS of rGO sheets with different thickness is identified. For the single-layer rGO, the DOS shows a whole band with band edges in line with theoretical predictions, and gating DOS is used to estimate electrons Fermi velocity. Disorder effects on conductance and DOS of rGO sheets are explored and compared with each other.

Original languageEnglish
Article number183110
JournalApplied Physics Letters
Volume101
Issue number18
DOIs
StatePublished - 29 Oct 2012

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