Direct patterning of low-k hydrogen silsesquioxane using x-ray exposure technology

T. C. Chang*, T. M. Tsai, Po-Tsun Liu, Y. S. Mor, C. W. Chen, Jeng-Tzong Sheu, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

An inorganic low-k material, hydrogen silsesquioxane (HSQ), patterned directly using X-ray exposure technology was investigated. In conventional integrated circuit integration processes, photoresist (PR) stripping with O2 plasma and wet chemical stripper are inevitable steps. However, dielectric degradation often occurs when low-k dielectrics undergo PR stripping processes. To overcome the integration issue X-ray direct patterning is proposed. In this technology, the dielectric regions illuminated by X-ray are cross-linked and form desired patterns, while the regions without X-ray illumination are dissolvable in the solvent of HSQ solution. An optical microscope image of an HSQ linear pattern was demonstrated for the first time to verify process feasibility.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume6
Issue number5
DOIs
StatePublished - 1 May 2003

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