Direct parametric extraction of 1/f noise source magnitude and physical location from baseband spectra in HBTs

D. R. Pehlke*, A. Sailer, W. J. Ho, J. A. Higgins, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalConference article

5 Scopus citations

Abstract

This work describes a novel equivalent circuit representation for the modeling of low frequency 1/f noise in Heterojunction Bipolar Transistors (HBTs), and is presented as part of an extraction procedure which combines direct calculation of the HBT equivalent circuit from S-parameters, and separate measurement of the base and collector noise voltage spectra to determine the magnitude and physical location of dominant intrinsic 1/f noise sources within the device.

Original languageEnglish
Pages (from-to)1305-1308
Number of pages4
JournalIEEE MTT-S International Microwave Symposium Digest
Volume3
DOIs
StatePublished - 1 Jan 1996
EventProceedings of the 1996 IEEE MTT-S International Microwave Symposium Digest. Part 1 (of 3) - San Franscisco, CA, USA
Duration: 17 Jun 199621 Jun 1996

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