Direct observations of defects in implanted and postannealed silicon wafers

L. D. Glowinski*, King-Ning Tu, P. S. Ho

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Scopus citations

Abstract

We have used transmission electron microscopy to study crystalline defects in Si wafers which were first implanted with Si ions to produce an amorphous surface layer and then annealed to produce epitaxial regrowth. The original high degree of crystalline perfection is not entirely recovered. In the implanted layer, small defect clusters, interstitial loops, and large half-loops have been observed. The density, distribution, and characteristics of these defects have been determined.

Original languageEnglish
Pages (from-to)312-313
Number of pages2
JournalApplied Physics Letters
Volume28
Issue number6
DOIs
StatePublished - 1 Dec 1976

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