Direct measurement of temperature distribution in flip-chip micro-bumps under current stressing by using infrared microscopy

Yu Chun Liang*, Chih Chen, D. J. Yao, T. C. Chang, C. J. Zhan, J. Y. Juang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Recently, the dimensions of the flip-chip solder bumps reduce to about 20-30 micrometers, also known as "micro-bumps" sandwitched between two Si chips. In such a structure, electromigration and thermomigration behaviors in the micro-bumps are not clear now. In this study, the temperature map distribution of Al traces and Al pads in CoC and C4 structures during current stressing was directly examined by using infrared microscopy. When the Joule heating power of the 8.3-ohm circuits was 0.14watt supported by 0.13-A current stressing at 100°C, the temperature increases of Al trace in CoC and C4 structure were 0.7°C and 5.5°C, respectively. During current stressing by 1.77×10 4 A/cm 2 at 100°C, the Joule heating of Al trace heated up the temperature of Al pad to 116.6°Cin the C4 structure, while there was no temperature increase in the Al pad in the CoC structure at such a stressing condition. According to Black's equation, the micro-bumps will have a longer MTTF as a result.

Original languageEnglish
Title of host publicationInternational Microsystems Packaging Assembly and Circuits Technology Conference, IMPACT 2010 and International 3D IC Conference, Proceedings
DOIs
StatePublished - 1 Dec 2010
Event2010 5th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2010 and International 3D IC Conference - Taipei, Taiwan
Duration: 20 Oct 201022 Oct 2010

Publication series

NameInternational Microsystems Packaging Assembly and Circuits Technology Conference, IMPACT 2010 and International 3D IC Conference, Proceedings

Conference

Conference2010 5th International Microsystems, Packaging, Assembly and Circuits Technology Conference, IMPACT 2010 and International 3D IC Conference
CountryTaiwan
CityTaipei
Period20/10/1022/10/10

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