TY - GEN
T1 - Direct measurement of temperature distribution in flip-chip micro-bumps under current stressing by using infrared microscopy
AU - Liang, Yu Chun
AU - Chen, Chih
AU - Yao, D. J.
AU - Chang, T. C.
AU - Zhan, C. J.
AU - Juang, J. Y.
PY - 2010/12/1
Y1 - 2010/12/1
N2 -
Recently, the dimensions of the flip-chip solder bumps reduce to about 20-30 micrometers, also known as "micro-bumps" sandwitched between two Si chips. In such a structure, electromigration and thermomigration behaviors in the micro-bumps are not clear now. In this study, the temperature map distribution of Al traces and Al pads in CoC and C4 structures during current stressing was directly examined by using infrared microscopy. When the Joule heating power of the 8.3-ohm circuits was 0.14watt supported by 0.13-A current stressing at 100°C, the temperature increases of Al trace in CoC and C4 structure were 0.7°C and 5.5°C, respectively. During current stressing by 1.77×10
4
A/cm
2
at 100°C, the Joule heating of Al trace heated up the temperature of Al pad to 116.6°Cin the C4 structure, while there was no temperature increase in the Al pad in the CoC structure at such a stressing condition. According to Black's equation, the micro-bumps will have a longer MTTF as a result.
AB -
Recently, the dimensions of the flip-chip solder bumps reduce to about 20-30 micrometers, also known as "micro-bumps" sandwitched between two Si chips. In such a structure, electromigration and thermomigration behaviors in the micro-bumps are not clear now. In this study, the temperature map distribution of Al traces and Al pads in CoC and C4 structures during current stressing was directly examined by using infrared microscopy. When the Joule heating power of the 8.3-ohm circuits was 0.14watt supported by 0.13-A current stressing at 100°C, the temperature increases of Al trace in CoC and C4 structure were 0.7°C and 5.5°C, respectively. During current stressing by 1.77×10
4
A/cm
2
at 100°C, the Joule heating of Al trace heated up the temperature of Al pad to 116.6°Cin the C4 structure, while there was no temperature increase in the Al pad in the CoC structure at such a stressing condition. According to Black's equation, the micro-bumps will have a longer MTTF as a result.
UR - http://www.scopus.com/inward/record.url?scp=79951596291&partnerID=8YFLogxK
U2 - 10.1109/IMPACT.2010.5699600
DO - 10.1109/IMPACT.2010.5699600
M3 - Conference contribution
AN - SCOPUS:79951596291
SN - 9781424497836
T3 - International Microsystems Packaging Assembly and Circuits Technology Conference, IMPACT 2010 and International 3D IC Conference, Proceedings
BT - International Microsystems Packaging Assembly and Circuits Technology Conference, IMPACT 2010 and International 3D IC Conference, Proceedings
Y2 - 20 October 2010 through 22 October 2010
ER -