Direct growth of large grain polycrystalline silicon films on aluminum-induced crystallization seed layer using hot-wire chemical vapor deposition

Bing Rui Wu, Shih Yung Lo, Dong Sing Wuu*, Sin Liang Ou, Hsin Yuan Mao, Jui Hao Wang, Ray-Hua Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Large grain polycrystalline silicon (poly-Si) films on glass substrates have been deposited on an aluminum-induced crystallization (AIC) seed layer using hot-wire chemical vapor deposition (HWCVD). A poly-Si seed layer was first formed by the AIC process and a thicker poly-Si film was subsequently deposited upon the seed layer using HWCVD. The effects of AIC annealing parameters on the structural and electrical properties of the poly-Si seed layers were characterized by Raman scattering spectroscopy, field-emission scanning electron microscopy, and Hall measurements. It was found that the crystallinity of seed layer was enhanced with increasing the annealing duration and temperature. The poly-Si seed layer formed at optimum annealing parameters can reach a grain size of 700 nm, hole concentration of 3.5 × 10 18 cm - 3, and Hall mobility of 22 cm 2/Vs. After forming the seed layer, poly-Si films with good crystalline quality and high growth rate (> 1 nm/s) can be obtained using HWCVD. These results indicated that the HWCVD-deposited poly-Si film on an AIC seed layer could be a promising candidate for thin-film Si photovoltaic applications.

Original languageEnglish
Pages (from-to)5860-5866
Number of pages7
JournalThin Solid Films
Volume520
Issue number18
DOIs
StatePublished - 1 Jul 2012

Keywords

  • Aluminum-induced crystallization
  • Electron microscopy
  • Grain size
  • Hot-wire chemical vapor deposition
  • Polycrystalline Si
  • Raman spectroscopy
  • Seed layer

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