Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition

Hung Wei Yu, Tsun Ming Wang, Hong Quan Nguyen, Yuen Yee Wong, Yung Yi Tu, Edward Yi Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this paper, the authors directly grew an InAs thin film (40 nm) by metalorganic chemical vapor deposition on GaAs/Ge substrates by using flow-rate modulation epitaxy with an appropriate V/III ratio. The growth of a high-quality InAs thin film with periodic 90° misfit dislocations was related to a uniform monolayer In atom distribution at the InAs/GaAs interface. The In monolayer effectively minimized the difference between surface energy and strain energy, producing a stable interface during material growth. The authors also found that a tightly controlled V/III ratio can improve the quality of the InAs islands on the GaAs/Ge heterostructures, though it is not the key factor in InAs thin-film growth.

Original languageEnglish
Article number050601
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume32
Issue number5
DOIs
StatePublished - 1 Sep 2014

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