Direct experimental evidence of the hole capture by resonant levels in boron doped silicon

Shun-Tung Yen*, V. Tulupenko, E. S. Cheng, A. Dalakyan, C. P. Lee, K. A. Chao, V. Belykh, A. Abramov, V. Ryzhkov

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The variation of hole population for the localized and resonant states of B-doped Si excited by sequences of short electric-field pulses has been investigated by the technique of time-resolved spectroscopy. The capture of holes by resonant levels is verified. A new spectral line earlier theoretically predicted was experimentally observed for the first time.

Original languageEnglish
Title of host publicationPHYSICS OF SEMICONDUCTORS
Subtitle of host publication27th International Conference on the Physics of Semiconductors, ICPS-27
Pages1192-1193
Number of pages2
DOIs
StatePublished - 30 Jun 2005
EventPHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 - Flagstaff, AZ, United States
Duration: 26 Jul 200430 Jul 2004

Publication series

NameAIP Conference Proceedings
Volume772
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

ConferencePHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27
CountryUnited States
CityFlagstaff, AZ
Period26/07/0430/07/04

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    Yen, S-T., Tulupenko, V., Cheng, E. S., Dalakyan, A., Lee, C. P., Chao, K. A., Belykh, V., Abramov, A., & Ryzhkov, V. (2005). Direct experimental evidence of the hole capture by resonant levels in boron doped silicon. In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1192-1193). (AIP Conference Proceedings; Vol. 772). https://doi.org/10.1063/1.1994538