Direct-current field dependence of dielectric properties in B2O3-SiO2 glass doped Ba0.6Sr0.4TiO3 ceramics

ZHAI Jiwei; YAO Xi; Cheng Xiaogang; Zhang Liangying; H. D. Chen

doi:10.1023/A:1016525712077

Direct-current field dependence of dielectric properties in B₂O₃-SiO₂ glass doped Ba_0.6Sr_0.4TiO₃ ceramics

ZHAI Jiwei^*, YAO Xi, Cheng Xiaogang, Zhang Liangying, H. D. Chen

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

The Ba_0.6Sr_0.4TiO₃ ceramics doped B₂O₃-SiO₂ glass prepared by a sol-gel process the effect of glass content on the DC field dependence of dielectric characteristics in Ba_0.6Sr_0.4TiO₃ ceramics were studied. The samples were observed and analysed by SEM and X-ray diffraction. The dielectric constant of a BST sample with 1 mol% B₂O₃-SiO₂ sintered at 1250°C was as good as that of undoped BST sintered at 1340°C. The dielectric constant samples decreases as the applied DC field increases. The influence of the DC field on the loss factor is much less than that on the dielectric constant. With increasing of the applied voltage, the T_c was increased and the peaks were surpressed and broadened. With increasing of glass content, the peaks were also surpressed and broadened. The maximum dielectric constant and the percentage change of dielectric constant under a DC field increase.

Original language	English
Pages (from-to)	3739-3745
Number of pages	7
Journal	Journal of Materials Science
Volume	37
Issue number	17
DOIs	https://doi.org/10.1023/A:1016525712077
State	Published - 1 Sep 2002

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@article{362a62942e3c49668c86ffd6eb539c96,

title = "Direct-current field dependence of dielectric properties in B2O3-SiO2 glass doped Ba0.6Sr0.4TiO3 ceramics",

abstract = "The Ba0.6Sr0.4TiO3 ceramics doped B2O3-SiO2 glass prepared by a sol-gel process the effect of glass content on the DC field dependence of dielectric characteristics in Ba0.6Sr0.4TiO3 ceramics were studied. The samples were observed and analysed by SEM and X-ray diffraction. The dielectric constant of a BST sample with 1 mol% B2O3-SiO2 sintered at 1250°C was as good as that of undoped BST sintered at 1340°C. The dielectric constant samples decreases as the applied DC field increases. The influence of the DC field on the loss factor is much less than that on the dielectric constant. With increasing of the applied voltage, the Tc was increased and the peaks were surpressed and broadened. With increasing of glass content, the peaks were also surpressed and broadened. The maximum dielectric constant and the percentage change of dielectric constant under a DC field increase.",

author = "ZHAI Jiwei and YAO Xi and Cheng Xiaogang and Zhang Liangying and Chen, {H. D.}",

year = "2002",

month = sep,

day = "1",

doi = "10.1023/A:1016525712077",

language = "English",

volume = "37",

pages = "3739--3745",

journal = "Journal of Materials Science",

issn = "0022-2461",

publisher = "Springer Netherlands",

number = "17",

}

TY - JOUR

T1 - Direct-current field dependence of dielectric properties in B2O3-SiO2 glass doped Ba0.6Sr0.4TiO3 ceramics

AU - Jiwei, ZHAI

AU - Xi, YAO

AU - Xiaogang, Cheng

AU - Liangying, Zhang

AU - Chen, H. D.

PY - 2002/9/1

Y1 - 2002/9/1

N2 - The Ba0.6Sr0.4TiO3 ceramics doped B2O3-SiO2 glass prepared by a sol-gel process the effect of glass content on the DC field dependence of dielectric characteristics in Ba0.6Sr0.4TiO3 ceramics were studied. The samples were observed and analysed by SEM and X-ray diffraction. The dielectric constant of a BST sample with 1 mol% B2O3-SiO2 sintered at 1250°C was as good as that of undoped BST sintered at 1340°C. The dielectric constant samples decreases as the applied DC field increases. The influence of the DC field on the loss factor is much less than that on the dielectric constant. With increasing of the applied voltage, the Tc was increased and the peaks were surpressed and broadened. With increasing of glass content, the peaks were also surpressed and broadened. The maximum dielectric constant and the percentage change of dielectric constant under a DC field increase.

AB - The Ba0.6Sr0.4TiO3 ceramics doped B2O3-SiO2 glass prepared by a sol-gel process the effect of glass content on the DC field dependence of dielectric characteristics in Ba0.6Sr0.4TiO3 ceramics were studied. The samples were observed and analysed by SEM and X-ray diffraction. The dielectric constant of a BST sample with 1 mol% B2O3-SiO2 sintered at 1250°C was as good as that of undoped BST sintered at 1340°C. The dielectric constant samples decreases as the applied DC field increases. The influence of the DC field on the loss factor is much less than that on the dielectric constant. With increasing of the applied voltage, the Tc was increased and the peaks were surpressed and broadened. With increasing of glass content, the peaks were also surpressed and broadened. The maximum dielectric constant and the percentage change of dielectric constant under a DC field increase.

UR - http://www.scopus.com/inward/record.url?scp=0036735952&partnerID=8YFLogxK

U2 - 10.1023/A:1016525712077

DO - 10.1023/A:1016525712077

M3 - Article

AN - SCOPUS:0036735952

VL - 37

SP - 3739

EP - 3745

JO - Journal of Materials Science

JF - Journal of Materials Science

SN - 0022-2461

IS - 17

ER -

Direct-current field dependence of dielectric properties in B₂O₃-SiO₂ glass doped Ba_0.6Sr_0.4TiO₃ ceramics

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