Direct-current field dependence of dielectric properties in B₂O₃-SiO₂ glass doped Ba_0.6Sr_0.4TiO₃ ceramics

The Ba_0.6Sr_0.4TiO₃ ceramics doped B₂O₃-SiO₂ glass prepared by a sol-gel process the effect of glass content on the DC field dependence of dielectric characteristics in Ba_0.6Sr_0.4TiO₃ ceramics were studied. The samples were observed and analysed by SEM and X-ray diffraction. The dielectric constant of a BST sample with 1 mol% B₂O₃-SiO₂ sintered at 1250°C was as good as that of undoped BST sintered at 1340°C. The dielectric constant samples decreases as the applied DC field increases. The influence of the DC field on the loss factor is much less than that on the dielectric constant. With increasing of the applied voltage, the T_c was increased and the peaks were surpressed and broadened. With increasing of glass content, the peaks were also surpressed and broadened. The maximum dielectric constant and the percentage change of dielectric constant under a DC field increase.