Direct current field and temperature dependent behaviors of antiferroelectric to ferroelectric switching in highly (100)-oriented PbZrO3 thin films

Jiwei Zhai, H. D. Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

The electric-field induced antiferroelectric (AFE) to ferroelectric (FE) phase switching was studied in sol-gel processed PbZrO3 thin films. The AFE to FE phase switching shifted to a lower temperature under a dc bias field. It was found that the adjustability of the AFE phase to FE in temperature was weakened if the thickness of the thin film decreased.

Original languageEnglish
Pages (from-to)2673-2675
Number of pages3
JournalApplied Physics Letters
Volume82
Issue number16
DOIs
StatePublished - 21 Apr 2003

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