Direct current field adjustable ferroelectric behaviour in (Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric thin films

Jiwei Zhai*, H. D. Chen, Eugene V. Colla, T. B. Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

22 Scopus citations

Abstract

(Pb, Nb) (Zr, Sn, Ti)O3 antiferroelectric (AFE) thin films have been fabricated on LaNiO3/Pt/Ti/SiO2/Si wafers using a sol-gel process. The electric field-induced antiferroelectric-to-ferroelectric (AFE-FE) phase transformation behaviour and its dependence on the temperature were examined by investigating the dielectric constant and dielectric loss versus temperature and electrical field. The AFE-FE phase transformation temperature can be adjusted as a function of the DC bias field and the thickness of the thin film. With increasing DC bias field, the FE phase region was enlarged, the AFE-FE transformation temperatures shifted to lower temperature, and the ferroelectric-to-paraelectric transformation temperature shifted to higher temperature. With increasing film thickness, the modulation effect of the DC bias field on the AFE-FE phase transformation temperature is increased.

Original languageEnglish
Pages (from-to)963-969
Number of pages7
JournalJournal of Physics Condensed Matter
Volume15
Issue number6
DOIs
StatePublished - 19 Feb 2003

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