Direct comparison of GaN-based e-mode architectures (recessed MISHEMT and p-GaN HEMTs) processed on 200mm GaN-on-Si with Au-free technology

Denis Marcon, Marleen Van Hove, Brice De Jaeger, Niels Posthuma, Dirk Wellekens, Shuzhen You, Xuanwu Kang, Tian-Li Wu, Maarten Willems, Steve Stoffels, Stefaan Decoutere

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

15 Scopus citations

Abstract

Gallium nitride transistors are going to dominate the power semiconductor market in the coming years. The natural form of GaN-based devices is "normally-on" or depletion mode (d-mode). Despite these type of devices can be used in power semiconductor systems by means of special drivers or in a cascode package solution, yet the market demands for normally-off or enhancement mode (e-mode) devices. In this work, we directly compare and analyze the two most common approaches to obtain GaN-based e-mode devices: recessed gate MISHEMTs and p-GaN HEMTs. Both approaches have their pro's and con's as well as their critical process steps.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices X
EditorsJen-Inn Chyi, Hadis Morkoc, Hiroshi Fujioka
PublisherSPIE
ISBN (Electronic)9781628414530
DOIs
StatePublished - 1 Jan 2015
EventGallium Nitride Materials and Devices X - San Francisco, United States
Duration: 9 Feb 201512 Feb 2015

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9363
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceGallium Nitride Materials and Devices X
CountryUnited States
CitySan Francisco
Period9/02/1512/02/15

Keywords

  • 200mm GaN-on-Si
  • Au free
  • e-mode
  • GaN

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