DIRECT AND FOWLER-NORDHEIM TUNNELING IN THIN GATE OXIDE MOS STRUCTURE.

C. Chang*, R. W. Brodersen, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

Theoretical analysis and experimental measurements have been carried out on the tunneling characteristics of thin gate oxide (3. 4 nm-13. 7 nm) MOS capacitors. In the Fowler-Nordheim tunneling regime, it is theoretically found that the 2-band model yields an equivalent result as the 1-band model, i. e. , the Fowler-Nordheim equation. Constants B and A of the F-N Eq. are observed experimentally to be slightly thickness dependent. In the Direct tunneling regime, the 2-band model has been demonstrated to give a better fit to the experimental curves. Valence band electron tunneling is predicted theoretically using a 2-band model and measured experimentally as the substrate hole current in a 5. 6 nm oxide transistor.

Original languageEnglish
Title of host publicationUnknown Host Publication Title
EditorsJ.F. Verweij, D.R. Wolters
PublisherNorth-Holland
Pages176-180
Number of pages5
ISBN (Print)044486735X
StatePublished - 1 Dec 1983

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    Chang, C., Brodersen, R. W., & Hu, C-M. (1983). DIRECT AND FOWLER-NORDHEIM TUNNELING IN THIN GATE OXIDE MOS STRUCTURE. In J. F. Verweij, & D. R. Wolters (Eds.), Unknown Host Publication Title (pp. 176-180). North-Holland.