Dirac fermion heating, current scaling, and direct insulator-quantum hall transition in multilayer epitaxial graphene

Fan Hung Liu, Chang Shun Hsu, Chiashain Chuang, Tak Pong Woo, Lung I. Huang, Shun-Tsung Lo, Yasuhiro Fukuyama, Yanfei Yang, Randolph E. Elmquist, Chi Te Liang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

We have performed magnetotransport measurements on multilayer epitaxial graphene. By increasing the driving current I through our graphene devices while keeping the bath temperature fixed, we are able to study Dirac fermion heating and current scaling in such devices. Using zero-field resistivity as a self thermometer, we are able to determine the effective Dirac fermion temperature (TDF) at various driving currents. At zero field, it is found that TDF ∝ /≈1/2. Such results are consistent with electron heating in conventional two-dimensional systems in the plateau-plateau transition regime. With increasing magnetic field B, we observe an I-independent point in the measured longitudinal resistivity ρxx which is equivalent to the direct insulator-quantum Hall (I-QH) transition characterized by a temperature-independent point in ρxx. Together with recent experimental evidence for direct I-QH transition, our new data suggest that such a transition is a universal effect in graphene, albeit further studies are required to obtain a thorough understanding of such an effect.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
StatePublished - 14 Nov 2013

Keywords

  • Direct insulator-quantum hall transition
  • Graphene
  • Magnetoresistivity measurements

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