Diode-pumped passively mode-locked 1342 nm Nd: YVO4 laser with an AlGaInAs quantum-well saturable absorber

S. C. Huang, H. L. Cheng, Yi Fan Chen, Kuan-Wei Su, Yung-Fu Chen, Kai-Feng Huang

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

We demonstrate what we believe to be the first use of AlGaInAs quantum wells (QWs) as a saturable absorber for a diode-pumped passively mode locked Nd: YVO4 laser at 1342 nm. The QWs are grown on a Fedoped InP substrate that is transparent at lasing wavelength. At an incident pump power of 13.5 W an average output power of 1.05 W with a continuous mode-locked pulse duration of 26.4 ps at a repetition rate of 152 MHz was generated.

Original languageEnglish
Pages (from-to)2348-2350
Number of pages3
JournalOptics Letters
Volume34
Issue number15
DOIs
StatePublished - 1 Aug 2009

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