Dimensional effects on the drain current of N- and P-channel polycrystalline silicon thin film transistors

Po Sheng Shih*, Hsiao-Wen Zan, Ting Chang Chang, Tiao Yuan Huang, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

N-channel and p-channel polysilicon thin film transistors (poly-Si TFTs) with different geometries were fabricated and characterized to study the interactive effects of active channel area on drain current. We find that for both non-passivated and passivated p-TFTs, since no avalanche multiplication is involved, the drain current is increased with reduced active channel area due to the reduction of grain-boundary trap density. In contrast, a somewhat unexpected trap dependence of the kink effect is observed in n-TFTs. Consequently, the dependence of active channel area on drain current differs between non-passivated n-TFTs with large trap density and passivated n-TFTs with small trap density.

Original languageEnglish
Pages (from-to)3879-3882
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number7 A
DOIs
StatePublished - Jul 2000

Keywords

  • Dimensional effect
  • Drain current
  • Grain-boundary trap density
  • Kink effect
  • Poly-Si TFT

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