Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography processes

Hsuen Li Chen*, Wen Chi Chao, Fu-Hsiang Ko, Tien Chi Chu, Hsu Chun Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

In this paper, we report on a bottom antireflective coating (BARC) layer for both KrF and ArF lithography processes. The antireflective layers are composed of diluted low-dielectric constant materials, such as bisbenzo(cyclobutene) (BCB), fluorinated poly(arylene)ether (FLARE) and SiLK. By adding an optimized thickness of diluted low-dielectric constant materials, the reflectance of less than 1% at the resist/silicon substrate interface can be achieved. Diluted low-dielectric constant materials also have great potential to be used as BARC layers on various highly-reflectance substrates for metalinterconnect applications. Using this structure, it is easy to reduce reflectance without adding an extra BARC layer for patterning low-dielectric materials. After the lithography procedure, the diluted low-dielectric constant layer need not be removed.

Original languageEnglish
Pages (from-to)3885-3889
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number6 B
DOIs
StatePublished - 1 Jun 2003

Keywords

  • ArF lithography
  • Bottom antireflective coatings
  • Diluted
  • KrF lithography
  • Low-dielectric constant materials

Fingerprint Dive into the research topics of 'Diluted low dielectric constant materials as bottom antireflective coating layers for both KrF and ArF lithography processes'. Together they form a unique fingerprint.

  • Cite this