Digital readout optimization of the random resistive states in magnetic tunnel junction

Thomas Egler, Hans Dittmann, Artur Useinov*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

True random number generators (TRNGs) provide a wide area of applications and can be fabricated on the basis of magnetic tunnel junctions (MTJs). This work represents the modeling of TRNG readout optimization, where the induced digital random bit is detected within only a single computational period. The period contains two sub-cycles: write and joined read & reset cycles. The system has a valuable potential to become stochastically independent after calibrating at the desired working point against the factors, which cause to the signal deviations: temperature-induced, material degradation or other problems.

Original languageEnglish
Article number107666
JournalSolid-State Electronics
Volume163
DOIs
StatePublished - Jan 2020

Keywords

  • Magnetic tunnel junctions
  • Stochastic switching
  • True random number generators

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