Diffusion of Co-sputtered metals as bonding materials for 3D interconnects during thermal treatments

S. Y. Hsu, H. Y. Chen, Kuan-Neng Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Diffusion behaviors of co-sputtered metals during thermal treatments were investigated, where these co-sputtered metals can be used as bonding materials for 3D Interconnects. In this paper, we report the diffusion behaviors and discuss the diffusion mechanisms of co-sputtered metals before and after annealing. Atom and vacancy volume, vacancy formation energy, and activation energy are proposed to explain the diffusion direction and diffusion rate among different co-sputtered metals. Based on the excellent bonding performance of this method, Cu/metal co-sputtering bonding is considered as a potential candidate for advanced bonding technology.

Original languageEnglish
Pages (from-to)2467-2471
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume12
Issue number3
DOIs
StatePublished - 3 Jul 2012

Keywords

  • 3D interconnects
  • Bonding
  • Co-sputtered
  • Diffusion

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