Recently) the point contact reactions between silicon nanowires (covered by natural oxide) and nanowires or nanodots of metals (nickel, cobalt, platinum) were discovered and studied. These reactions have at least three remarkable characteristics: (1) the reaction product phase is quite different from thin film or bulk reactions (for example, in Ni-Si reaction the appearing phase is Ni1Si1 or Ni1Si2, depending on the orientation of Si, instead of common Ni2Si phase); (2) Phase is formed not in the contact zone but, instead, near the wire tip or between two point contacts; (3) Subsequent phase growth of silicide inside silicon nanowire is a "stop-and-go" process consisting of waiting time before formation of critical island of each new atomic layer and then the fast filling of this new layer (mechanism suggested in 30-s for ideal crystals) Models of surface diffusion along and penetration through silicon oxide are presented. Nucleation models need more place and will be discussed in subsequent parts.
|Title of host publication||Grain Boundary Diffusion, Stresses and Segregation|
|Publisher||Trans Tech Publications Ltd|
|Number of pages||6|
|State||Published - 1 Jan 2011|
- Diffusion controlled reaction
- Surface diffusion