Diffusion in point contact reaction

Andriy M. Gusak, A. O. Kovalchuk, King-Ning Tu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recently) the point contact reactions between silicon nanowires (covered by natural oxide) and nanowires or nanodots of metals (nickel, cobalt, platinum) were discovered and studied. These reactions have at least three remarkable characteristics: (1) the reaction product phase is quite different from thin film or bulk reactions (for example, in Ni-Si reaction the appearing phase is Ni1Si1 or Ni1Si2, depending on the orientation of Si, instead of common Ni2Si phase); (2) Phase is formed not in the contact zone but, instead, near the wire tip or between two point contacts; (3) Subsequent phase growth of silicide inside silicon nanowire is a "stop-and-go" process consisting of waiting time before formation of critical island of each new atomic layer and then the fast filling of this new layer (mechanism suggested in 30-s for ideal crystals) Models of surface diffusion along and penetration through silicon oxide are presented. Nucleation models need more place and will be discussed in subsequent parts.

Original languageEnglish
Title of host publicationGrain Boundary Diffusion, Stresses and Segregation
PublisherTrans Tech Publications Ltd
Pages143-148
Number of pages6
Volume309-310
ISBN (Print)9783037850558
DOIs
StatePublished - 1 Jan 2011

Keywords

  • Diffusion controlled reaction
  • Nucleation
  • Silicide
  • Surface diffusion

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