Reliability of microelectronic devices obtained, for example, by flip-chip technology depends on behaviour of solder bumps, under-bump metallization (UBM) and metallic interconnects. Mean time to failure (MTF) of these devices is determined by the processes of intermetallic-phase nucleation, growth, ripening in UBM as well as by nucleation, growth, migration, trapping, interactions of voids in solder bumps and interconnects. A given paper includes recent results of authors, which are concerning: 1) the synergy of diffusion, grain growth and ripening in reaction between copper and liquid solder; 2) the synergy of mass transfer and morphology evolution in two-phase solder bump under sharp temperature gradients; 3) the phenomenological and Monte Carlo models of recently-discovered new mechanism of failure by migration of nano-voids along interfaces; 4) the electromigration-induced grain rotation.
|Number of pages||22|
|Journal||Metallofizika i Noveishie Tekhnologii|
|State||Published - 1 Jan 2009|