Diffusion-controlled effects of luminescent efficiency in InGaN/GaN light-emitting diodes

Y. S. Wang*, N. C. Chen, Jenn-Fang Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Temperature dependence of photoluminescence (PL) and time-resolved photoluminescence (TRPL) were used to investigate the recombination process in InGaN/GaN light-emitting diodes (LEDs). The results exhibited that the nonradiative recombination process can be explained by diffusion-controlled kinetic.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
Pages1222-1224
Number of pages3
DOIs
StatePublished - 1 Dec 2011
EventConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 - Sydney, Australia
Duration: 28 Aug 20111 Sep 2011

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Conference

ConferenceConference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011
CountryAustralia
CitySydney
Period28/08/111/09/11

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  • Cite this

    Wang, Y. S., Chen, N. C., & Chen, J-F. (2011). Diffusion-controlled effects of luminescent efficiency in InGaN/GaN light-emitting diodes. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2011 (pp. 1222-1224). [6193747] (Optics InfoBase Conference Papers). https://doi.org/10.1109/IQEC-CLEO.2011.6193747