A diffusion behavior was observed for co-sputtered metals during thermal treatment, while these metals were fabricated as bonding mediums in 3D IC applications. This paper reports and discusses the mechanical behavior of co-sputtering metals before and after annealing. In addition, co-sputtering metal bonding seems to be an option for bonding technology based on their excellent bonding results.
|Title of host publication||4th IEEE International NanoElectronics Conference, INEC 2011|
|State||Published - 26 Sep 2011|
|Event||4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan|
Duration: 21 Jun 2011 → 24 Jun 2011
|Name||Proceedings - International NanoElectronics Conference, INEC|
|Conference||4th IEEE International Nanoelectronics Conference, INEC 2011|
|Period||21/06/11 → 24/06/11|