Diffusion behavior and mechanism of co-sputtering metals as bonding materials for 3D IC interconnects during annealing treatment

S. Y. Hsu*, J. Y. Shih, Kuan-Neng Chen

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A diffusion behavior was observed for co-sputtered metals during thermal treatment, while these metals were fabricated as bonding mediums in 3D IC applications. This paper reports and discusses the mechanical behavior of co-sputtering metals before and after annealing. In addition, co-sputtering metal bonding seems to be an option for bonding technology based on their excellent bonding results.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
DOIs
StatePublished - 26 Sep 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 Jun 201124 Jun 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523

Conference

Conference4th IEEE International Nanoelectronics Conference, INEC 2011
CountryTaiwan
CityTao-Yuan
Period21/06/1124/06/11

Keywords

  • 3DIC
  • bonding
  • co-sputtering
  • diffusion

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