Dielectrics for MOS integrated circuits

H. Iwai*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper author's historical 45 year works for the development of the dielectrics for MOS Integrated Circuits are described as an invited talk as the recipient of 2017 ECS DS&T Thomas D. Callinan Award. Dielectric films has been the key components of the MOS LSI's since its beginning. The author's contributions include introduction of BPSG reflow technique into NMOS LSI technology, the finding of plasma induced damage to the gate oxide during ion implantation and reactive ion etching the introduction of RTN gate oxide to prevent the boron penetration, the introduction of direct-tunneling gate oxide for CMOS logic devices, and the demonstration of the 0.4 nm EOT Lasilicate gate oxide MOSFETs.

Original languageEnglish
Title of host publicationEmerging Materials for Post CMOS Devices/Sensing and Applications 8
EditorsY. Obeng, P. Srinivasan, S. De Gendt, P. Hesketh, Z. Karim, D. Misra
PublisherElectrochemical Society Inc.
Pages25-30
Number of pages6
Edition2
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2017
EventSymposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 - 231st ECS Meeting 2017 - New Orleans, United States
Duration: 28 May 20171 Jun 2017

Publication series

NameECS Transactions
Number2
Volume77
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Emerging Materials for Post CMOS Devices/Sensing and Applications 8 - 231st ECS Meeting 2017
CountryUnited States
CityNew Orleans
Period28/05/171/06/17

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