Dielectric studies of ZnSe1-xTex epilayers

H. M. Lin*, Y. F. Chen, J. L. Shen, Wu-Ching Chou

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

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Abstract

We present the results of experimental investigations on dielectric properties of ZnSe1-xTex epilayers by capacitance and dissipation factor at temperature 5 K<T<475 K and frequency 20 Hz<f<1 MHz. A Debye-like relaxation of dielectric behavior has been observed, which is found to be a thermally activated process. The activation energies obtained from capacitance and dissipation factor are in very good agreement. The activation energies decrease with the increase of Se content, and range from 662 to 819 meV. The results are described by means of the four-center model, in which the number of different atoms occupying the nearest-neighbor sites of defects results in a different activation energy.

Original languageEnglish
Pages (from-to)1909-1911
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number13
DOIs
StatePublished - 26 Mar 2001

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