Dielectric relaxation and defect analysis of Ta2O5 thin films

S. Ezhilvalavan*, Ming Shiahn Tsai, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations


The presence of defects in thin-film dielectrics often leads to dielectric relaxation as a function of frequency, in which the dielectric constant decreases and the loss tangent increases with increasing frequency. Dielectric relaxation results in charge storage capacity reduction under dynamic random access memory operating conditions. In this work, the dielectric relaxation behaviour of dc reactive sputtered Ta2O5 thin film was investigated. Using dielectric dispersion measurements as a function of frequency (100 Hz≤f≤10 MHz) and temperature (27 °C≤T≤150 °C), we determined the dielectric relaxation and defect quantity of the films and propose an equivalent circuit on the basis of complex capacitance, admittance and impedance spectral studies.

Original languageEnglish
Pages (from-to)1137-1142
Number of pages6
JournalJournal of Physics D: Applied Physics
Issue number10
StatePublished - 21 May 2000

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