Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process

Jiwei Zhai*, Y. Yao, X. Li, T. F. Hung, Z. K. Xu, H. D. Chen, Eugene V. Colla, T. B. Wu

*Corresponding author for this work

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Antiferroelectric PbZrO 3 (PZ) films have been fabricated on LaNiO 3/Pt/Ti/SiO 2/Si substrates using a sol-gel process. The films with perovskite structure showed highly 〈001〉 preferred orientation. An antiferroelectric phase was identified by the presence of 1/4110 superlattice spots in a [001] selected area electron diffraction pattern. The field-induced antiferroelectric to ferroelectric phase switching was demonstrated at room temperature with full saturation and a maximum polarization of 40 μC/cm 2. Dielectric properties were investigated as a function of both temperature and frequency. The presence of a conductive buffer layer of LaNiO 3 on Pt/Ti/SiO 2/Si substrate enabled the growth of high quality and highly oriented PZ antiferroelectric thin films that showed near zero remanent polarization and squared hysteresis loops.

Original languageEnglish
Pages (from-to)3990-3994
Number of pages5
JournalJournal of Applied Physics
Issue number7
StatePublished - 1 Oct 2002

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    Zhai, J., Yao, Y., Li, X., Hung, T. F., Xu, Z. K., Chen, H. D., Colla, E. V., & Wu, T. B. (2002). Dielectric properties of oriented PbZrO 3 thin films grown by sol-gel process. Journal of Applied Physics, 92(7), 3990-3994. https://doi.org/10.1063/1.1505981