Dielectric properties of metal-organic chemical vapor deposited highly textured Pb(ScTa)1-xTixO3 (x=0-0.3) relaxor ferroelectric thin films on LaNiO3 electrode buffered Si

Chun-Hsiung Lin*, S. W. Lee, Haydn Chen, T. B. Wu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Highly (100) textured Pb(ScTa)1-xTixO3 (x=0-0.3) thin films were grown on LaNiO3/Pt/Ti electrode-coated Si substrate using metal-organic chemical vapor deposition at 685°C. Ti addition was introduced to modify the dielectric properties. Diffuse phase transition, typical of relaxor ferroelectrics was noticed. As Ti content increased from 0% to 30%, the phase transition temperature (Tmax) gradually shifted from -10 to 120°C with the dielectric constant at Tmax increased from 1397 to 1992 (1 kHz). Loss tangent values are generally below 0.025.

Original languageEnglish
Pages (from-to)2485-2487
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number16
DOIs
StatePublished - 18 Oct 1999

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