Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition

Yingbang Yao, Jiwei Zhai, H. D. Chen*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

The preparation of antiferroelectric lead lanthanum zirconate stanate titanate (PLZST) thin films by pulsed laser deposition was investigated. The Pb loss during the deposition process was found to play a key role in the formation of perovskite phase. The optimal processing conditions were found to be at 175° C substrate temperature and 600 °C postdeposition annealing temperature. The results show an increase in the dielectric strength from 425 kV/cm to 625 kV/cm.

Original languageEnglish
Pages (from-to)6341-6346
Number of pages6
JournalJournal of Applied Physics
Volume95
Issue number11 I
DOIs
StatePublished - 1 Jun 2004

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