Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors

Xuming Zou, Chun Wei Huang, Lifeng Wang, Long Jing Yin, Wenqing Li, Jingli Wang, Bin Wu, Yunqi Liu, Qian Yao, Changzhong Jiang, Wen-Wei Wu, Lin He, Shanshan Chen, Johnny C. Ho, Lei Liao*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

A study is conducted to demonstrate dielectric engineering of a boron nitride/hafnium oxide (HfO2) heterostructure for high-performance 2D field effect transistors. It has been shown that placing 2D semiconductors on hexagonal boron nitride (h-BN) can yield a drastic improvement in their corresponding carrier mobilities. the capacitors are fabricated by depositing 16 nm thick HfO2 on p+-Si substrates with and without the h-BN interlayer to evaluate the dielectric characteristic of h-BN/ HfO2 heterostructured stack and investigate the corresponding device performance.

Original languageEnglish
Pages (from-to)2062-2069
Number of pages8
JournalAdvanced Materials
Volume28
Issue number10
DOIs
StatePublished - 1 Jan 2016

Keywords

  • 2D materials
  • boron nitride
  • dielectric engineering
  • heterostructures
  • transistors

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