Dielectric confinement effect in ZnO quantum dots embedded in amorphous SiO2 matrix

Yu Yun Peng, Tsung-Eong Hsien*, Chia Hung Hsu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


The dielectric confinement effect on the blue shift ΔEg(a) of the ZnO quantum dots (QDs) embedded in the SiO2 matrix is evaluated by applying a multi-shell two-electron system model. The experimental measurement and the calculations of various dielectric structures indicate that the composite matrix structure provides a better estimation of the blue shift of the ZnO QDs-SiO2 system than the multi-shell structure. The proportionality factor x defined in this work exhibits a dependence of the dielectric confinement energy on the specific dimension ratio (the b/a ratio) and the dielectric constant εmatrix of the outer matrix. The result of the calculation also shows the limit of the two-electron system in estimating the ground-state energy of samples with high dot density. However, the correlation shows the existence of the strong dielectric confinement effect in ZnO QDs-SiO2 thin films and allows a better understanding of the semiconductor QDs-dielectric systems.

Original languageEnglish
Article number046
Pages (from-to)6071-6075
Number of pages5
JournalJournal of Physics D: Applied Physics
Issue number19
StatePublished - 7 Oct 2007

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