Dielectric confinement effect in ZnO quantum dots embedded in amorphous SiO2 matrix

Yu Yun Peng, Tsung-Eong Hsien*, Chia Hung Hsu

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

The dielectric confinement effect on the blue shift ΔEg(a) of the ZnO quantum dots (QDs) embedded in the SiO2 matrix is evaluated by applying a multi-shell two-electron system model. The experimental measurement and the calculations of various dielectric structures indicate that the composite matrix structure provides a better estimation of the blue shift of the ZnO QDs-SiO2 system than the multi-shell structure. The proportionality factor x defined in this work exhibits a dependence of the dielectric confinement energy on the specific dimension ratio (the b/a ratio) and the dielectric constant εmatrix of the outer matrix. The result of the calculation also shows the limit of the two-electron system in estimating the ground-state energy of samples with high dot density. However, the correlation shows the existence of the strong dielectric confinement effect in ZnO QDs-SiO2 thin films and allows a better understanding of the semiconductor QDs-dielectric systems.

Original languageEnglish
Article number046
Pages (from-to)6071-6075
Number of pages5
JournalJournal of Physics D: Applied Physics
Volume40
Issue number19
DOIs
StatePublished - 7 Oct 2007

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