Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applications

Po-Tsun Liu*, T. C. Chang, T. M. Tsai, Z. W. Lin, C. W. Chen, B. C. Chen, S. M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Direct patterning of nonphotosensitive low-k hydrogen silsesquioxane (HSQ) was achieved using electron beam (EB) lithography. The smallest feature size of 60 nm for damascene lines was demonstrated without using etch-stop layer, photoresist, and dry-etching technologies. The probability of low-k degradation can be thereby avoided during these pattern transfer processes. Material analysis including FTIR and TDS have confirmed the explanation, certainly indicating that relatively high intensity of Si-H bonds and low content of moisture were present in the electron-beam-exposed silicate.

Original languageEnglish
Pages (from-to)4226-4228
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number20
DOIs
StatePublished - 17 Nov 2003

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