Dielectric and ferroelectric properties of highly oriented (Pb,Nb)(Zr,Sn,Ti)O3 thin films grown by a sol-gel process

Zhai Jiwei*, M. H. Cheung, Zheng Kui Xu, Xin Li, H. D. Chen, Eugene V. Colla, T. B. Wu

*Corresponding author for this work

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

Antiferroelectric (Pb,Nb)(Zr,Sn,Ti)O3 thin films were deposited via a sol-gel process on LaNiO3-coated silicon substrates. Films showed a strong (001) preferred orientation upon annealing at 500-700°C for 30 min. The dependence of electrical properties on film thickness has been studied, with the emphasis placed on field-induced phase switching from the antiferroelectric to the ferroelectric state. The decrease of film thickness led to an increase of the phase-switching field along with the appearance of remanent polarization. However, the dielectric constant and maximum polarization decreased with the reduction of film thickness. Saturation polarization was 35 μC/cm2, which is equal to that observed in bulk samples.

Original languageEnglish
Pages (from-to)3621-3623
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number19
DOIs
StatePublished - 4 Nov 2002

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