Dielectric and electrical properties of SrTiO (3 ± y)-(SiO2)x thin films

Hsiu Yu Chou*, Teng-Ming Chen, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

110 nm thick SrTiO(3 ± y)-(SiO2)x thin films with x ≤ 0-0.45 were prepared on Pt/Ti/SiO2/Si substrates using the chemical solution deposition method and then annealed at temperatures ranging from 600°C to 900°C for 1 min. The dielectric and electrical properties of the SrTiO(3 ± y)-(SiO 2)x were obviously affected by the annealing temperature and composition. The dielectric constant of the thin films increased with increasing annealing temperature and decreased with an increase in Si content while the leakage current density decreased with an increase in Si content. The 700°C annealed SrTiO(3 ± y)-(SiO2)x thin film with x ≤ 0.25 has a suitable dielectric constant of 94.8 and a low leakage current of 1.27 × 10-8 A cm-2. The time-dependent dielectric breakdown curve of the 700°C and 800°C annealed SrTiO(3 ± y)-(SiO2)x films with x ≤ 0.25 have an expected lifetime of over 10 years at electric fields higher than 0.6 MV cm-1.

Original languageEnglish
Pages (from-to)2446-2451
Number of pages6
JournalJournal of Physics D: Applied Physics
Volume38
Issue number14
DOIs
StatePublished - 21 Jul 2005

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