Diamond-shaped Ge and Ge0.9Si0.1 gate-all-around nanowire FETs with four {111} facets by dry etch technology

Yao Jen Lee, Fu Ju Hou, Shang Shiun Chuang, Fu Kuo Hsueh, Kuo Hsing Kao, Po Jung Sung, Wei You Yuan, Jay Yi Yao, Yu Chi Lu, Kun Lin Lin, Chien Ting Wu, Hisu Chih Chen, Bo Yuan Chen, Guo Wei Huang, Henry J.H. Chen, Jiun Yun Li, Yi-ming Li, Seiji Samukawa, Tien Sheng Chao, Tseung Yuen TsengWen Fa Wu, Tuo Hung Hou, Wen Kuan Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

We propose a feasible pathway to scale the Ge MOSFET technology by using a novel diamond-shaped Ge and Ge09Si01 gate-all-around (GAA) nanowire (NW) FETs with four {111} facets. The device fabrication requires only simple top-down dry etching and blanket Ge epitaxy techniques readily available in mass production. The proposed dry etching process involves three isotropic/anisotropic etching steps with different Cl2/HBr ratios for forming the suspended diamond-shaped channel. Taking advantages of the GAA configuration, favorable carrier mobility of the {111} surface, nearly defect-free suspended channel, and improved dopant activation by incorporating Si, nFET and pFET with excellent performance have been demonstrated, including an Ion/Ioff ratio exceeding 108, the highest ever reported for Ge-based pFETs.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages15.1.1-15.1.4
ISBN (Electronic)9781467398930
DOIs
StatePublished - 16 Feb 2015
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 7 Dec 20159 Dec 2015

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Conference

Conference61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period7/12/159/12/15

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