Abstract
Diamond was grown on polycrystalline CoSi2/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach ∼109 cm-2 with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture.
Original language | English |
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Pages (from-to) | 172-175 |
Number of pages | 4 |
Journal | Materials Chemistry and Physics |
Volume | 72 |
Issue number | 2 |
DOIs | |
State | Published - 1 Nov 2001 |
Keywords
- Diamond
- Electron microscopy
- Nucleation
- Plasma-assisted CVD