Diamond growth on CoSi2/Si by bias-enhanced microwave plasma chemical vapor deposition method

Mao Rong Chen, Li Chang*, Der Fu Chang, Hou Guang Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Diamond was grown on polycrystalline CoSi2/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach ∼109 cm-2 with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture.

Original languageEnglish
Pages (from-to)172-175
Number of pages4
JournalMaterials Chemistry and Physics
Volume72
Issue number2
DOIs
StatePublished - 1 Nov 2001

Keywords

  • Diamond
  • Electron microscopy
  • Nucleation
  • Plasma-assisted CVD

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