Diamond growth on CoSi2/Si by bias-enhanced microwave plasma chemical vapor deposition method

Mao Rong Chen; Li Chang; Der Fu Chang; Hou Guang Chen

doi:10.1016/S0254-0584(01)00430-8

Diamond growth on CoSi₂/Si by bias-enhanced microwave plasma chemical vapor deposition method

Mao Rong Chen, Li Chang^*, Der Fu Chang, Hou Guang Chen

^*Corresponding author for this work

National Chiao Tung University

Research output: Contribution to journal › Article

3 Scopus citations

Abstract

Diamond was grown on polycrystalline CoSi₂/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach ∼10⁹ cm^-2 with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi₂ surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi₂ surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture.

Original language	English
Pages (from-to)	172-175
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	72
Issue number	2
DOIs	https://doi.org/10.1016/S0254-0584(01)00430-8
State	Published - 1 Nov 2001

Keywords

Diamond
Electron microscopy
Nucleation
Plasma-assisted CVD

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Chen, M. R., Chang, L., Chang, D. F., & Chen, H. G. (2001). Diamond growth on CoSi₂/Si by bias-enhanced microwave plasma chemical vapor deposition method. Materials Chemistry and Physics, 72(2), 172-175. https://doi.org/10.1016/S0254-0584(01)00430-8

@article{585a728e1f68433182924ccfc15af46d,

title = "Diamond growth on CoSi2/Si by bias-enhanced microwave plasma chemical vapor deposition method",

abstract = "Diamond was grown on polycrystalline CoSi2/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach ∼109 cm-2 with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture.",

keywords = "Diamond, Electron microscopy, Nucleation, Plasma-assisted CVD",

author = "Chen, {Mao Rong} and Li Chang and Chang, {Der Fu} and Chen, {Hou Guang}",

year = "2001",

month = nov,

day = "1",

doi = "10.1016/S0254-0584(01)00430-8",

language = "English",

volume = "72",

pages = "172--175",

journal = "Materials Chemistry and Physics",

issn = "0254-0584",

publisher = "Elsevier BV",

number = "2",

}

TY - JOUR

T1 - Diamond growth on CoSi2/Si by bias-enhanced microwave plasma chemical vapor deposition method

AU - Chen, Mao Rong

AU - Chang, Li

AU - Chang, Der Fu

AU - Chen, Hou Guang

PY - 2001/11/1

Y1 - 2001/11/1

N2 - Diamond was grown on polycrystalline CoSi2/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach ∼109 cm-2 with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture.

AB - Diamond was grown on polycrystalline CoSi2/Si substrates by bias-enhanced microwave plasma chemical vapor deposition. Both of the positive and negative biasing effects were investigated by microstructural characterization. It has been found that nucleation density can reach ∼109 cm-2 with positive biasing, much higher than with negative biasing. Cross-sectional transmission electron microscopy shows that diamond deposited by positive biasing grows on a relatively smooth CoSi2 surface, while the etching effect of ion bombardment during negative biasing results in a rough CoSi2 surface. The diamond morphology obtained with negative bias has a flat surface with a strong (1 0 0) texture.

KW - Diamond

KW - Electron microscopy

KW - Nucleation

KW - Plasma-assisted CVD

UR - http://www.scopus.com/inward/record.url?scp=0035501119&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(01)00430-8

DO - 10.1016/S0254-0584(01)00430-8

M3 - Article

AN - SCOPUS:0035501119

VL - 72

SP - 172

EP - 175

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 2

ER -